advanced power p-channel enhancement mode electronics corp. power mosfet 100% r g & uis test bv dss -30v low on-resistance r ds(on) 9m simple drive requirement i d -60a rohs compliant & halogen-free description absolute maximum ratings@ t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t c =25 a i d @t a =25 a i d @t a =70 a i dm a p d @t c =25 w p d @t a =25 w t stg t j symbol value unit rthj-c maximum thermal resistance, junction-case 2.5 /w rthj-a maximum thermal resistance, junction-ambient 3 25 /w data and specifications subject to change without notice 201609051 1 AP6679BMT rating halogen-free product -30 + 20 -19.1 parameter drain-source voltage gate-source voltage drain current 3 , v gs @ 10v drain current, v gs @ 10v -60 -55 to 150 drain current 3 , v gs @ 10v -15.3 pulsed drain current 1 -200 storage temperature range 5 -55 to 150 total power dissipation 50 thermal data parameter total power dissipation operating junction temperature range s s s g pmpak ? 5 x 6 d d d d g d s a p6679b series are from advanced power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. it provides the designe r with an extreme efficient device for use in a wide range of powe r applications. the pmpak ? 5x6 package is special for dc-dc converters application and the foot print is compatible with so-8 with backside heat sink and lower profile. .
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -30 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-20a - - 9 m ? v gs =-4.5v, i d =-20a - - 15 m ? v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-20a - 66 - s i dss drain-source leakage current v ds =-24v, v gs =0v - - -10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =-20a - 43 69 nc q gs gate-source charge v ds =-15v - 11 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 21 - nc t d(on) turn-on delay time v ds =-15v - 16 - ns t r rise time i d =-1a - 13 - ns t d(off) turn-off delay time r g =3.3 -69- ns t f fall time v gs =-10v - 43 - ns c iss input capacitance v gs =0v - 3900 6240 pf c oss output capacitance v ds =-15v - 620 - pf c rss reverse transfer capacitance f=1.0mhz - 520 - pf r g gate resistance f=1.0mhz - 3 6 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-20a, v gs =0v - - -1.2 v t rr reverse recovery time i s =-20a, v gs =0 v , - 27 - ns q rr reverse recovery charge di/dt=100a/s - 10 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec ; 60 o c/w at steady state. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP6679BMT .
ap6679bm t fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature 2.01e+09 fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 40 80 120 160 200 02468 -v ds , drain-to-source voltage (v) -i d , drain current (a) -10v -8.0v -7.0v -6.0v -5.0v v g = -4.0v t c =25 o c 0 20 40 60 80 100 120 0123456 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c = 150 o c -10v -8.0v -7.0v -6.0v -5.0v v g = -4.0v 6 8 10 12 14 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d = -20 a t c =25 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = -20a v g = -10v 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) 0 4 8 12 16 20 0 0.2 0.4 0.6 0.8 1 1.2 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c i d = -250ua .
ap6679bm t fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance 2011082301 fig 11. transfer characteristics fig 12. drain current v.s. case temperature 4 0 2 4 6 8 0 20406080 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -20 a v ds = -15v 0 1000 2000 3000 4000 5000 6000 1 5 9 13 17 21 25 29 33 37 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 1000 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc operation in this area limited by r ds(on) 0 20 40 60 80 25 50 75 100 125 150 t c , case temperature ( o c ) -i d , drain current (a) 0 20 40 60 80 100 0123456 -v gs , gate-to-source voltage (v) -i d , drain current (a) t j =150 o c t j =25 o c v ds = -5v t j = -55 o c .
ap6679bm t fig 13. normalized bv dss v.s. junction fig 14. total power dissipation temperature fig 15. typ. drain-source on state resistance 5 0 20 40 60 80 0 50 100 150 t c , case temperature( o c) p d , power dissipation(w) 0 0.4 0.8 1.2 1.6 2 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss i d = -1ma 0 10 20 30 40 50 0 20 40 60 80 100 120 -i d , drain current (a) r ds(on) (m ) t j =25 o c -4.5v v gs = -10v .
AP6679BMT marking information 6 date code (ywwsss) y last digit of the year ww week sss sequence part numbe r 6679b ywwsss .
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